FeTRAM New Power Saving Technology The combination of RAM Polymers & Silicon nanowireA technology of RAM (Random Access Memory) is currently being developed by researchers. With that combination, the power consumption of RAM to be more energy efficient, but has a much better speed.

FeTRAM, transistor ferroelectric random access memory, is the result of a combination of a nanowire with a polymer. According to its manufacturer in the Birck Nanotechnology Center (BNC) at Purdue University, thanks to a combination of these, FetRAM has its own performance compared with traditional RAM.

Ferroelectric materials have the ability to change the polarity of the field according to which is nearby. This property is used by researchers at the BNC to shape ferroelectric transistors that are currently on the market yet.

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